Scaling relation of the anomalous Hall effect in (Ga,Mn)As

Abstract

We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities sigma_{xx} ranging from the low- to the high-conductivity regime. The anomalous Hall conductivity sigma_{xy}^(AH) is extracted from the measured longitudinal and Hall resistivities. A transition from sigma_{xy}^(AH)=20 Omega^{-1}cm^{-1} due to the Berry phase effect in the high-conductivity regime to a scaling relation sigma_{xy}^(AH) proportional to sigma_{xx}^{1.6} for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

Accepted for publication in Physical Review B

References in corpus (6)

• Universal Scaling Behavior of Anomalous Hall Effect and Anomalous Nernst Effect in Itinerant Ferromagnets
• Intrinsic vs. extrinsic anomalous Hall effect in ferromagnets
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• Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet
• Direct probing of band-structure Berry phase in diluted magnetic semiconductors