Tuning the ferromagnetic properties of hydrogenated GaMnAs
arXiv:cond-mat/0504387 · doi:10.1063/1.2126147
Abstract
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in strong modifications of their ferromagnetic properties. In particular, we observed in magnetotransport experiments the decrease of the Curie temperature, along with modifications of the magnetic anisotropy, a behavior consistent with the mean-field theory.
References in corpus (5)
- Anomalous Hall effect in ferromagnetic semiconductors
- Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
- Temperature Dependent Magnetic Anisotropy in (Ga,Ma)As Layers
- Fundamental Curie temperature limit in ferromagnetic GaMnAs
- Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
Cited by in corpus (15)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
- Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
- Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
- Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
- Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
- High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
- Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory
- Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
- Magnetic patterning of (Ga,Mn)As by hydrogen passivation
- Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen
- Tailoring the magnetism of GaMnAs films by ion irradiation
- Hydrogen patterning of Ga1-xMnxAs for planar spintronics
- A new route to enhance the ferromagnetic transition temperature in diluted magnetic semiconductors
- Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors