292 citations · 544 across the 9 of their papers we have counts for
9 papers
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
Tuning superconductivity in nanosecond laser annealed boron doped epilayers
S. Nath, I. Turan, L. Desvignes +8
Superconductivity in ultra-doped epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the so…
Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Coherent generation and detection of acoustic phonons in topological nanocavities
G. Arregui, O. Ortíz, M. Esmann +7
Inspired by concepts developed for fermionic systems in the framework of condensed matter physics, topology and topological states are recently being explored also in bosonic syste…
Optical spectroscopy of two-dimensional layered perovskite
K. Gauthron, J. S. Lauret, L. Doyennette +8
We report on optical spectroscopy (photoluminescence and photoluminescence excitation) on two-dimensional self-organized layers of perovs…
Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers
Aristide Lemaître, Audrey Miard, Laurent Travers +6
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…
Evolution of the magnetic anisotropy with carrier density in hydrogenated (Ga,Mn)As
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +3
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possi…
Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +4
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magne…
Tuning the ferromagnetic properties of hydrogenated GaMnAs
Laura Thevenard, Ludovic Largeau, Olivia Mauguin +2
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin G…