Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Aristide Lemaître, Audrey Miard, Laurent Travers +6

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…