Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism

Abstract

Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.

5 figures, to be published in Physical Review B

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Cited by in corpus (6)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Itinerant ferromagnetism mediated by giant spin polarization of metallic ligand band in van der Waals magnet Fe5GeTe2
• Itinerant ferromagnetism in the As 4$p$ conduction band of Ba${}_{0.6}$K${}_{0.4}$Mn${}_2$As${}_2$ identified by x-ray magnetic circular dichroism
• Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
• (Ga,Mn)As under pressure: a first-principles investigation
• Orbital magnetization in dilute ferromagnetic semiconductors