paper

(Ga,Mn)As under pressure: a first-principles investigation

arXiv:1502.03861 · doi:10.1103/PhysRevB.91.184409

Abstract

Electronic and magnetic properties of GaMnAs, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for and under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for that non-hybridized Mn-3 levels and Mn-induced states reside about 5 and 0.4 eV below the Fermi energy, respectively. For elevated pressures, the Mn-3 levels, Mn-induced states, and the Fermi level shift towards higher energies, however, the position of the Mn-induced states relative to the Fermi energy remains constant due to hybridization of the Mn-3 levels with the valence As-4 orbitals. We also evaluate, employing Monte Carlo simulations, the Curie temperature (). At zero pressure, we obtain K, whereas the pressure-induced changes in are d/dK/GPa for and an estimated value of d/dK/GPa for under pressures up to 6 GPa. The determined values of d/d compare favorably with d/d(2-3) K/GPa at GPa found experimentally and estimated within the - Zener model for GaMnAs in the regime where hole localization effects are of minor importance [M. Gryglas-Borysiewicz ., Phys. Rev. B , 153204 (2010)].

7 pages, 5 figures

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