activity
20182022
most citedEnhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

36 citations · 106 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci20223 cited

On Curie temperature of B20-MnSi films

Zichao Li, Ye Yuan, Viktor Begeza +5

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechani…

cond-mat.mtrl-sci202221 cited

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Mao Wang, Ye Yu, Slawomir Prucnal +13

Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…

cond-mat.mtrl-sci2021

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Zichao Li, Ye Yuan, René Hübner +8

Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the r…

cond-mat.mtrl-sci202136 cited

Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl +10

Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs…

physics.app-ph2020

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

Mao Wang, Eric García-Hemme, Yonder Berencén +7

Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compat…

cond-mat.mtrl-sci2020

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…