43 citations · 173 across the 12 of their papers we have counts for
10 papers · 1 filter
Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, René Hübner +12
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this allo…
On Curie temperature of B20-MnSi films
Zichao Li, Ye Yuan, Viktor Begeza +5
B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechani…
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature
Zichao Li, Ye Yuan, René Hübner +8
Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the r…
Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure
Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl +10
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Slawomir Prucnal, Viton Heera, René Hübner +11
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
S. Prucnal, K. Gao, I. Skorupa +11
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band struc…