71 citations · 156 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2018★ 71 cited
Breaking the doping limit in silicon by deep impurities
Mao Wang, A. Debernardi, Y. Berencén +10
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here…
cond-mat.mtrl-sci2018★ 71 cited
Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature
Mao Wang, Y. Berencén, E. García-Hemme +11
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existi…
cond-mat.mtrl-sci2017★ 14 cited
Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing
F. Liu, S. Prucnal, Y. Berencén +9
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation…