32 citations · 135 across the 12 of their papers we have counts for
13 papers
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Mohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu +8
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complement…
Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
Moritz Hoesch, Olena Fedchenko, Mao Wang +10
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculatio…
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping
Mao Wang, Eric García-Hemme, Yonder Berencén +7
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compat…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Chi Xu, Chenhui Zhang, Mao Wang +7
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…