32 citations · 100 across the 7 of their papers we have counts for
9 papers · 1 filter
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Chi Xu, Chenhui Zhang, Mao Wang +7
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…
Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors
Chi Xu, Mao Wang, Ye Yuan +3
A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is p…
Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Slawomir Prucnal, Viton Heera, René Hübner +11
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…