32 citations · 135 across the 12 of their papers we have counts for
10 papers · 1 filter
Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy
Moritz Hoesch, Olena Fedchenko, Mao Wang +10
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculatio…
Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Mao Wang, Ye Yu, Slawomir Prucnal +13
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensin…
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang +17
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrate…
p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties
Chi Xu, Chenhui Zhang, Mao Wang +7
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases,…
Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors
Chi Xu, Mao Wang, Ye Yuan +3
A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is p…
Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Slawomir Prucnal, Viton Heera, René Hübner +11
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, super…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…
Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
Yufang Xie, Ye Yuan, Mao Wang +7
Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) su…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction
Ye Yuan, Mao Wang, Chi Xu +6
In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping t…