2 papers
cond-mat.mtrl-sci2016
Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
S. Souma, L. Chen, R. Oszwaldowski +5
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate n…
cond-mat.mtrl-sci2016
Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
Shengqiang Zhou, Lin Li, Ye Yuan +11
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…