27 citations · 59 across the 5 of their papers we have counts for
5 papers · 1 filter
Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
S. Souma, L. Chen, R. Oszwaldowski +5
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate n…
Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
Shengqiang Zhou, Lin Li, Ye Yuan +11
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…
Bias current dependence of the spin lifetime in insulating AlGaAs
Jennifer Misuraca, Joon-Il Kim, Jun Lu +6
The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating AlGaAs:Si using a three-terminal Hanle effect geometry.…
Spin transport and accumulation in the persistent photoconductor AlGaAs
Jennifer Misuraca, Joon-Il Kim, Jun Lu +6
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the…
Band modification in (Ga, Mn)As evidenced by new measurement scheme --- magnetic photoresistance circular dichroism
XueJiao Huang, HouZhi Zheng, LiGuo Wang +2
The expected features of diluted magnetic semiconductors still remain in controversial issue, concerning whether or not s, p-d (f) exchange interactions indeed modify the host semi…