Model for vacancy-induced d ferromagnetism in oxide compounds
arXiv:cond-mat/0603022 · doi:10.1103/PhysRevLett.96.207602
Abstract
We propose a model with few parameters, for vacancy-induced ferromagnetism based on a correlated model for anions (oxygen orbitals) with random potentials that represent cation vacancies. There is a range of potential strength for which moments appear on oxygen sites neighboring the vacancies. By using techniques which allow us to treat the randomness exactly, we calculate the magnetic couplings between the total moment around each vacancy, the Curie temperature and dynamical correlations as a function of the effective stren gth of the vacancy potential and doping properties, the density of vacancies, as well as the correlation and band width of the host. For physically reasonable parameters this predicts Curie temperatures well above room temperature for small concentrations of vacancies and appropriate parameters. We disc uss our results in relation to questions of stability and reproducibility raised in experiments. To circumvent the difficulties of controlling intrinsic defects, we propose specific non-magnetic host doping that could be, for example, substituted for cations in HfO or ZrO.
4 figures + tex files. Accepted for publication in Physical Review Letters. Note that the title has changed and the text is slightly modified
References in corpus (13)
- Ferromagnetism in substituted zinc oxide
- A possible path to a new class of ferromagnetic and half metallic ferromagnetic materials
- Ferromagnetism in Oriented Graphite Samples
- First- principle calculations of magnetic interactions in correlated systems
- Ferromagnetism in Hubbard Models
- Calculating the Curie Temperature reliably in diluted III-V ferromagnetic semiconductors
- Point defects, ferromagnetism and transport in calcium hexaboride
- Ferromagnetism in single-band Hubbard models with a partially flat band
- Why RKKY exchange integrals are inappropriate to describe ferromagnetism in diluted magnetic semiconductors
- Compensation, interstitial defects and ferromagnetism in diluted semiconductors
- Unrestricted Hartree-Fock for Quantum Dots
- Persistent Currents in Multichannel Interacting Systems
- Theory of itinerant-electron ferromagnetism
Cited by in corpus (22)
- Magnetism in Disordered Graphene and Irradiated Graphite
- Spinodal nanodecomposition in magnetically doped semiconductors
- Magnetism without magnetic impurities in oxides ZrO2 and TiO2
- Magnetism in C or N-doped MgO and ZnO: density-functional study of impurity pairs
- Electron doping and magnetic moment formation in N- and C-doped MgO
- Is room temperature ferromagnetism possible in K-doped SnO2?
- Ferromagnetism in Nitrogen-doped MgO
- d0 Ferromagnetism in Ag-doped Monoclinic ZrO2 Compounds
- Magnetic properties of HO2 thin films
- Influence of oxygen vacancy on the electronic structure of HfO film
- Role of vacancies and impurities in the ferromagnetism of semiconducting CaB6
- d0 Ferromagnetism in Li-doped ZnO Compounds
- Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO
- Non-perturbative model and ferromagnetism in dilute magnets
- Nitrogen-induced Ferromagnetism in BaO
- Dynamical properties of a three-dimensional diluted Heisenberg model
- Reconsidering the possibility of room temperature ferromagnetism in Mn doped Zirconium oxide
- Spin-polarized surface state in Li-doped SnO(001)
- On the reliability of recent Monte Carlo studies of dilute systems of localized spins interacting with itinerant carriers
- Nano-pattern induced ferromagnetism in strongly correlated electrons
- Room Temperature d Ferromagnetism in Carbon Doped LaH: Insights From Density Functional Theory Simulations
- RKKY couplings in the Lieb lattice: flat-band induced frustration