Magnetic properties of HO2 thin films

Abstract

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P ~= 10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5 <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.

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Cited by in corpus (5)

• Magnetism without magnetic impurities in oxides ZrO2 and TiO2
• Controlled oxygen vacancy induced p-type conductivity in HfO{2-x} thin films
• Is room temperature ferromagnetism possible in K-doped SnO2?
• Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO${}_{2\pm x}$
• A neural-network-backed effective harmonic potential study of the ambient pressure phases of hafnia