Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO$_{2\pm x}$

Erwin Hildebrandt; Jose Kurian; Lambert Alff

doi:10.1063/1.4767379

paper

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO $_{2 \pm x}$

arXiv:1211.5215 · doi:10.1063/1.4767379

Abstract

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO $_{2 \pm x}$ grown by reactive molecular beam epitaxy (MBE). The oxidation conditions induce a switching between ( $1 ˉ 11$ ) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and $p$ -type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

11 pages, 15 figures

References in corpus (4)

Cited by in corpus (1)

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x​

Abstract

References in corpus (4)

Cited by in corpus (1)

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO $_{2 \pm x}$