Electronic excitations of magnetic impurity state in diluted magnetic semiconductor (Ga,Mn)As
arXiv:1306.1474 · doi:10.1103/PhysRevLett.112.107203
Abstract
The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn RIXS spectra can be explained by - excitations from the Mn ground state, dominated by charge-transferred states, rather than a Mn ground state. Unlike archetypical - excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the - excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through hybridization of the Mn orbital with the ligand band.
5 pages, 3 figures
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- Evolution of the Fe-3 impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb
- Magnetic Properties and Electronic Configurations of Mn Ions in the Diluted Magnetic Semiconductor BaK(ZnMn)As Studied by X-ray Magnetic Circular Dichroism and Resonant Inelastic X-ray Scattering