Magnetic Properties and Electronic Configurations of Mn Ions in the Diluted Magnetic Semiconductor BaK(ZnMn)As Studied by X-ray Magnetic Circular Dichroism and Resonant Inelastic X-ray Scattering
arXiv:2201.13061 · doi:10.7566/JPSJ.91.064710
Abstract
The magnetic properties and the electronic excitations of the new diluted magnetic semiconductor BaK(ZnMn)As have been studied by x-ray magnetic circular dichroism (XMCD) and resonant inelastic x-ray scattering (RIXS) at the Mn edge. The sum rule analysis of the XMCD spectra yields the net spin moment of /Mn and the small orbital moment of /Mn. This indicates that the Mn atoms are in the high-spin configurations of , whereas the presence of competing ferromagnetic and antiferromagnetic interactions between the Mn ions reduces the net spin moment. RIXS spectra show broad peaks from 1 to 6 eV energy loss, which originate from the - crystal field excitations of the Mn ions. Based on a comparison of the RIXS line shapes with those of GaMnAs, we conclude that the ground state of Mn in BaK(ZnMn)As consists not only of the charge-transferred electron configuration (: ligand hole) with weakly bound holes as in GaMnAs, but also of the pure configuration with free holes.
References in corpus (7)
- Achieving High Curie Temperature in (Ga,Mn)As
- Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
- Theory of Mn-doped I-II-V Semiconductors
- Nature of magnetic coupling between Mn ions in as-grown GaMnAs studied by x-ray magnetic circular dichroism
- Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins
- Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor BaK(ZnMn)As Isostructural to Fe-based Superconductors
- Anisotropic spin distribution and perpendicular magnetic anisotropy in the layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)As