Rapid diffusion of electrons in GaMnAs

Abstract

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.

5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version

References in corpus (6)

• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Spin-polarized current amplification and spin injection in magnetic bipolar transistors
• Light-induced magnetization precession in GaMnAs
• Imaging ambipolar diffusion of photocarriers in GaAs thin films
• Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
• Diffusion of degenerate minority carriers in a p-type semiconductor

Cited by in corpus (1)

• Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures