Light-induced magnetization precession in GaMnAs

Abstract

We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession damping (Gilbert damping) is found to be strongly influenced by annealing of the sample.

6 pages, 4 figures. accepted in Applied Physics Letters

References in corpus (3)

• Theory of ferromagnetic (III,Mn)V semiconductors
• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation

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• Ultrafast Probes of Nonequilibrium Hole Spin Relaxation in Ferromagnetic Semiconductor GaMnAs
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• Mechanism of photo-excited precession of magnetization in (Ga,Mn)As on the basis of time-resolved spectroscopy
• Broadband ferromagnetic resonance characterization of GaMnAs thin films
• Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
• Laser-induced Precession of Magnetization in GaMnAs
• Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers
• Rapid diffusion of electrons in GaMnAs