Thermally-Assisted Current-Driven Domain Wall Motion
arXiv:cond-mat/0607663 · doi:10.1103/PhysRevLett.98.056605
Abstract
Starting from the stochastic Landau-Lifschitz-Gilbert equation, we derive Langevin equations that describe the nonzero-temperature dynamics of a rigid domain wall. We derive an expression for the average drift velocity of the domain wall as a function of the applied current, and find qualitative agreement with recent magnetic semiconductor experiments. Our model implies that at any nonzero temperature the average domain-wall velocity initially varies linearly with current, even in the absence of non-adiabatic spin torques.
4 pages, 2 figures
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Cited by in corpus (11)
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- Domain walls in (Ga,Mn)As diluted magnetic semiconductor
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