Voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices

Abstract

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy efficient voltage controlled nanomagnetic deep neural networks that can learn in real time.

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Cited by in corpus (3)

• Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications
• Quantized Non-Volatile Nanomagnetic Synapse based Autoencoder for Efficient Unsupervised Network Anomaly Detection
• Voltage Controlled Energy Efficient Domain Wall Synapses with Stochastic Distribution of Quantized Weights in the Presence of Thermal Noise and Edge Roughness