Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As

Abstract

The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of the anisotropy. As a demonstration of the sensitivity of the method, we show that these typically reveal the presence of both the [-110] and the [010] uniaxial magnetic anisotropy component in (Ga,Mn)As layers, even when most other techniques reveal only one of these components.

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References in corpus (7)

• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
• Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
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• Anisotropic Magnetoresistance in Ga${}_{1-x}$Mn${}_x$As
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• Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions
• Magnetic properties of wurtzite (Ga,Mn)As
• Complex domain wall dynamics in compressively strained GaMnAs epilayers
• Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies
• Temperature dependent Neel wall dynamics in GaMnAs/GaAs