activity
20062009
most citedControl of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation

88 citations · 250 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall20091 cited

Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

R. G. Dengel, C. Gould, J. Wenisch +3

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device w…

cond-mat.mes-hall2008

Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system

S. Mark, C. Gould, K. Pappert +4

We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still s…

cond-mat.mes-hall200838 cited

Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As

K. Pappert, C. Gould, M. Sawicki +4

This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed,…

cond-mat.mes-hall200826 cited

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

C. Gould, S. Mark, K. Pappert +14

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprint…

cond-mat.mes-hall200788 cited

Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation

J. Wenisch, C. Gould, L. Ebel +7

We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophis…

cond-mat.mes-hall200659 cited

Lithographic engineering of anisotropies in (Ga,Mn)As

S. Hümpfner, M. Sawicki, K. Pappert +6

The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properti…