Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

Abstract

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many proposed nanomagnetic gates do not possess the seven essential characteristics of a Boolean logic gate: concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error-rates vastly exceed that of conventional transistor-based logic gates, which is a drawback. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is ~2 orders of magnitude less than that of other nano-magnetic (non-volatile) logic gates and ~1 order of magnitude less than that of (volatile) CMOS-based logic gates. The error-resilience is also superior to that of other known nanomagnetic gates.

There were some typographical errors in version 2 which have been corrected

References in corpus (9)

• Hybrid spintronics and straintronics: A magnetic technology for ultra low energy computing and signal processing
• Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations
• Switching energy-delay of all-spin logic devices
• All Spin Logic device with inbuilt Non-Reciprocity
• Fast magnetization switching of Stoner particles: A nonlinear dynamics picture
• Magnetization Dynamics, Throughput and Energy Dissipation in a Universal Multiferroic Nanomagnetic Logic Gate with Fan-in and Fan-out
• Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic
• Ultra-low-energy non-volatile straintronic computing using single multiferroic composites
• Ultra-High Density, High-Performance and Energy-Efficient All Spin Logic

Cited by in corpus (15)

• Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications
• Voltage controlled core reversal of fixed magnetic skyrmions without a magnetic field
• Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory
• Electric field control of magnetic states in isolated and dipole-coupled FeGa nanomagnets delineated on a PMN-PT substrate
• Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies
• Low Barrier Nanomagnet Design for Binary Stochastic Neurons: Design Challenges for Real Nanomagnets with Fabrication Defects
• Exploring Performance, Coherence, and Clocking of Magnetization in Multiferroic Four-State Nanomagnets
• Image Processing with Dipole-Coupled Nanomagnets: Noise Suppression and Edge Enhancement Detection
• Applications of Nanomagnets as Dynamical Systems
• An observable effect of spin inertia in slow magneto-dynamics: Increase of the switching error rates in nanoscale ferromagnets
• Nanomagnetic Boolean Logic -- The Tempered (and Realistic) Vision
• Ultra-low-energy Electric field-induced Magnetization Switching in Multiferroic Heterostructures
• Comment on some articles regarding magnetization switching and computing using strain-mediated multiferroic composites
• Straintronic magneto-tunneling-junction based ternary content addressable memory
• Comment on two recent arXiv postings [arXiv:1412.2200 and arXiv:1412.8244]