Equivalent Circuit for Magnetoelectric Read and Write Operations

Abstract

We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0'" states are not represented by states with net magnetization (like $m_x$, $m_y$ or $m_z$) but by different easy axes, quantitatively described by ($m_x^2-m_y^2$) which switches from "0" to "1" through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of ($m_x^2-m_y^2$) to represent a bit is a radical departure from the standard convention of using the magnetization ($m$) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to non-volatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions.

6 pages, 4 figures

References in corpus (10)

• Robust isothermal electric switching of interface magnetization: A route to voltage-controlled spintronics
• Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
• Stochastic p-bits for Invertible Logic
• Intrinsic optimization using stochastic nanomagnets
• Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain
• Hardware emulation of stochastic p-bits for invertible logic
• Giant Magnetoelectric Effect via Strain-Induced Spin-Reorientation Transitions in Ferromagnetic Films
• Low Barrier Nanomagnets as p-bits for Spin Logic
• A building block for hardware belief networks
• Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Cited by in corpus (4)

• p-Bits for Probabilistic Spin Logic
• A Magnetoelectric Memory Device Based on Pseudo-Magnetization
• Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure
• Connecting physics to systems with modular spin-circuits