activity
20022004
most citedElectrical resistance: an atomistic view

234 citations · 304 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2004

A Quantum Mechanical Approach for the Simulation of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors

Jing Wang, Eric Polizzi, Avik Ghosh +2

In this work, we present a quantum mechanical approach for the simulation of Si/SiO2 interface roughness scattering in silicon nanowire transistors (SNWTs). The simulation domain i…

cond-mat.mes-hall2004234 cited

Electrical resistance: an atomistic view

Supriyo Datta

This tutorial article presents a "bottom-up" view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arises as we m…

cond-mat.mes-hall200339 cited

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

Jing Guo, Supriyo Datta, Mark Lundstrom +1

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper…

cond-mat.mes-hall200331 cited

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Jing Guo, Ali Javey, Hongjie Dai +2

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such…

cond-mat.mes-hall2002

Resistance of a Molecule

Magnus Paulsson, Ferdows Zahid, Supriyo Datta

In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Our purpose in thi…