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20022004
most citedElectrical resistance: an atomistic view

234 citations · 304 across the 4 of their papers we have counts for

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13 papers · 1 filter

cond-mat.mes-hall200812 cited

Spin Transfer Torque as a Non-Conservative Pseudo-Field

Sayeef Salahuddin, Deepanjan Datta, Supriyo Datta

In this paper we show that the spin transfer torque can be described by a pseudo magnetic field, proportional to the magnetic moment of the itinerant electrons that enters the Land…

cond-mat.mes-hall2008

Electronic transport driven spin-dynamics

L. Siddiqui, D. Saha, S. Datta +1

We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a…

cond-mat.mes-hall20081 cited

Nanoelectronic Devices: A Unified View

Supriyo Datta

Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to di…

cond-mat.mes-hall20086 cited

Spin Dephasing and Hot Spins

Supriyo Datta

At this summer school, I have tried to describe a general approach to quantum transport problems based on the Non-equilibrium Green Function (NEGF) method . I will not repeat this…

cond-mat.mes-hall2008

Atomistic Non-equilibrium Green s Function Simulations of Graphene Nano-Ribbons in the Quantum Hall Regime

Roksana Golizadeh-Mojarad, A. N. M. Zainuddin, Gerhard Klimeck +1

The quantum Hall effect in Graphene nano-ribbons (GNR) is investigated with the non-equilibrium Green s function (NEGF) based quantum transport model in the ballistic regime. The n…

cond-mat.mes-hall20078 cited

Use of negative capacitance to provide a sub-threshold slope lower than 60 mV/decade

Sayeef Salahuddin, Supriyo Datta

It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a facto…