First-principles study on tunnel magnetoresistance effect with Cr-doped RuO electrode
arXiv:2404.12645 · doi:10.1103/PhysRevB.110.064433
Abstract
We investigate the functionality of the -doped as an electrode of the magnetic tunnel junction (MTJ), motivated by the recent experiment showing that -doping into the rutile-type will be an effective tool to control its antiferromagnetic order and the resultant magnetotransport phenomena easily. We perform first-principles calculation of the tunnel magnetoresistance (TMR) effect in the MTJ based on the -doped electrodes. We find that a finite TMR effect appears in the MTJ originating from the momentum-dependent spin splitting in the electrodes, which suggests that with Cr-doping will work as the electrode of the MTJ. We also show that this TMR effect can be qualitatively captured using the local density of states inside the tunnel barrier.
7 pages, 4 figures
References in corpus (12)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Antiferromagnetism in RuO as -wave Pomeranchuk instability
- Itinerant Antiferromagnetism in RuO
- Nonmagnetic Ground State in RuO Revealed by Muon Spin Rotation
- Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions
- Fragility of the magnetic order in the prototypical altermagnet RuO
- Antiferromagnetic Tunnel Junctions for Spintronics
- Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect
- Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode
- First-principles spin-transfer torque in CuMnAsGaPCuMnAs junctions
- All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance