First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions

Abstract

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunnelling magnetoresistance. Calculations are performed for CuMnAs$|$GaP$|$CuMnAs junctions with different surface terminations between the anti-ferromagnetic CuMnAs electrodes and the insulating GaP spacer. In particular we find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

7 pages, 7 figures

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• Multi-scale modelling of current-induced switching in magnetic tunnel junctions using ab initio spin transfer torques
• First-principles quantum transport modeling of spin-transfer and spin-orbit torques in magnetic multilayers
• Brownian Motion and Entropic Torque Driven Motion of Domain-Wall in Antiferromagnets
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• Spin transfer torque in Mn${}_3$Ga-based ferrimagnetic tunnel junctions from first principles
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• Spin-transport, spin-torque and memory in antiferromagnetic devices: Part of a collection of reviews on antiferromagnetic spintronics
• Approaches to tunnel magnetoresistance effect with antiferromagnets
• Ab initio study of magnetoresistance effect in $\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}/\mathrm{MgO}/\mathrm{M}{\mathrm{n}}_3\mathrm{Sn}$ antiferromagnetic tunnel junction
• Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions