Robust spin-transfer torque and magnetoresistance in non-collinear antiferromagnetic junctions

Abstract

Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects different from the spin-transfer torque in ferromagnetic junctions.

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Cited by in corpus (12)

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• Néel Spin Currents in Antiferromagnets
• Antiferromagnetic Tunnel Junctions for Spintronics
• Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current
• Time-dependent multistate switching of topological antiferromagnetic order in Mn${}_3$Sn
• Nearly perfect spin polarization of noncollinear antiferromagnets
• Spin-orbit torque for field-free switching in C_{3v} crystals
• Noncollinear Antiferromagnetic Spintronics
• Theory of superdiffusive spin transport in noncollinear magnetic multilayers
• Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions
• Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr${}_2$O${}_3$ thin films
• Hall mass and transverse Noether spin currents in noncollinear antiferromagnets