72 citations · 146 across the 10 of their papers we have counts for
10 papers
Parametrically induced strong coupling between a superconducting quantum circuit and a solid-state spin ensemble
Alejandro E. Baptista, Jinwoong Kim, Sonia Rani +2
Efficient quantum state transfer between superconducting circuits and solid-state spins would unlock high-coherence quantum memories for superconducting quantum processors. We demo…
Relativistic Effects in LaBi Thin Films
Reiley Dorrian, Sungmin Song, Jinwoong Kim +4
Chemical substitution in crystalline quantum materials is a powerful way to explore the consequences of strong spin-orbit coupling on their structural and electronic properties. In…
Stacking-Selective Epitaxy of Rare-Earth Diantimonides
Reiley Dorrian, Jinwoong Kim, Adrian Llanos +4
Deterministic control of the layering configuration of two-dimensional quantum materials plays a central role in studying their emergent electronic properties. Here we demonstrate…
Unveiling the Electronic, Transport, and Migration Properties of the Te-Defect Lattice in DyTe
Jinwoong Kim, Nicholas Kioussis
The rare-earth ditellurides are known to form two-dimensional square lattice where the strong Fermi surface nesting leads to structural modulation. In contrast to charge density wa…
Monoclinic LaSb Superconducting Thin Films
Adrian Llanos, Giovanna Campisi, Veronica Show +5
Rare-earth diantimondes exhibit coupling between structural and electronic orders which are tunable under pressure and temperature. Here we present the discovery of a new polymorph…
Magnetochiral Tunneling in Paramagnetic CoNbS
Seongjoon Lim, Sobhit Singh, Fei-Ting Huang +6
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the…
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…
Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2
Fei-Ting Huang, Seong Joon Lim, Sobhit Singh +7
Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl…
Weyl node assisted conductivity switch in interfacial phase change memory with van der Waals interfaces
Jinwoong Kim, Jeongwoo Kim, Young-Sun Song +3
The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological propertie…