236 citations · 323 across the 3 of their papers we have counts for
3 papers
All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci +14
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential re…
Observation of current-induced switching in non-collinear antiferromagnetic IrMn by differential voltage measurements
Sevdenur Arpaci, Victor Lopez-Dominguez, Jiacheng Shi +9
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-or…
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
Zhenyi Zheng, Yue Zhang, Victor Lopez-Dominguez +15
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switchin…