Crucial role of interfacial $s$-$d$ exchange interaction in the temperature dependence of tunnel magnetoresistance

Abstract

The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the $s$-$d$ exchange interaction between conduction $s$ and localized $d$ electrons at interfacial ferromagnetic layers. By calculating the temperature dependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMR ratio significantly decreases with increasing temperature owing to the spin-flip scattering in the ${\Delta }_1$ state induced by the $s$-$d$ exchange interaction. The material dependence of the coupling constant $J_{sd}$ is also discussed on the basis of a nonempirical method.

6 pages, 5 figures, 1 table

References in corpus (3)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Non-quasiparticle states in Co${}_2$MnSi evidenced through magnetic tunnel junction spectroscopy measurements
• Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Cited by in corpus (4)

• Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions
• Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO${}_3$ barriers
• Theory for Tunnel Magnetoresistance Oscillation
• Approaches to tunnel magnetoresistance effect with antiferromagnets