Electrical current switching of the noncollinear antiferromagnet Mn${}_3$GaN

Abstract

We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn${}_3$GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of $1.5\times 10^6$~A/cm${}^2$, whereas no significant change is observed up to $\sim 10^8$~A/cm${}^2$ in Mn${}_3$GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn${}_3$GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn${}_3$GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform of AFM spintronics.

arXiv commentThe following article has been accepted by Applied Physics Letter

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• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn${}_3$Pt thin films
• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN
• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
• Noncollinear Antiferromagnetic Spintronics
• Anomalous Nernst effect in Mn${}_3$NiN thin films
• Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn${}_3$Ni${}_{0.35}$Cu${}_{0.65}$N films
• Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers
• Ferroelectric control of Néel vector in L10 type of antiferromagnetic films
• Optimization of reactively sputtered Mn3GaN films based on resistivity measurements
• Impact of Dzyaloshinskii-Moriya and anisotropic exchange interactions on the cubic kagome antiferromagnets Mn${}_3$X and Mn${}_3$AB
• Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals
• Approaches to tunnel magnetoresistance effect with antiferromagnets