Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers

Abstract

While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn${}_{3}A$N/ferromagnet-Co${}_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $\tau$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of $H_{ex}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.

arXiv commentAccepted in Phys. Rev. B

References in corpus (28)

• Spin torque switching with the giant spin Hall effect of tantalum
• Antiferromagnetic spintronics
• Antiferromagnetic spintronics
• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Electrical switching of an antiferromagnet
• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Electrical Manipulation of a Topological Antiferromagnetic State
• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
• Antidamping torque-induced switching in biaxial antiferromagnetic insulators
• Spin transfer and current-induced switching in antiferromagnets
• Anomalous current-induced spin torques in ferrimagnets near compensation
• Electrical switching of antiferromagnetic Mn${}_2$Au and the role of thermal activation
• Spin transfer in an antiferromagnet
• Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
• Electrical Switching of Tristate Antiferromagnetic Néel Order in $\alpha$-Fe${}_2$O${}_3$ Epitaxial Films
• How to manipulate magnetic states of antiferromagnets
• Magnetization reversal by injection and transfer of spin: experiments and theory
• Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks
• Structurally driven metamagnetism in MnP and related Pnma compounds
• Piezomagnetic effect as a counterpart of negative thermal expansion in magnetically frustrated Mn-based antiperovskite nitrides
• Topology analysis for anomalous Hall effect in the non-collinear antiferromagnetic states of Mn${}_{3}A$N ($A$ = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)
• The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures
• Symmetry and the macroscopic dynamics of antiferromagnetic materials in the presence of spin-polarized current
• Electrical current switching of the noncollinear antiferromagnet Mn${}_3$GaN
• Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn${}_3$Ni${}_{1-x}$Cu${}_x$N
• Electrical Néel-order switching in magnetron-sputtered CuMnAs thin films
• Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn${}_3$Ni${}_{0.35}$Cu${}_{0.65}$N films
• Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers

Cited by in corpus (1)

• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN