Scaling the electrical current switching of exchange bias in fully-epitaxial antiferromagnet/ferromagnet bilayers

Abstract

While the electrical current manipulation of antiferromagnets (AFMs) has been demonstrated, the extent of the studied AFM materials has been limited with few systematic experiments and a poor understanding. We compare the electrical current switching of the exchange-bias field ($H_{ex}$) in AFM-Mn${}_{3}A$N/ferromagnet-Co${}_3$FeN bilayers. An applied pulse current can manipulate $H_{ex}$ with respect to the current density and FM layer magnetization, which shifts exponentially as a function of the current density. We found that the saturation current density and exponential decay constant $\tau$ increase with the local moment of AFM Mn atoms. Our results highlight the effect of the AFM local moment to electrical current switching of $H_{ex}$, although it has a near-zero net magnetization, and may provide a facile way to explore the electrical current manipulation of AFM materials.

Accepted in Phys. Rev. B

References in corpus (6)

• Writing and Reading antiferromagnetic Mn${}_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance
• Electrical Manipulation of a Topological Antiferromagnetic State
• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
• Spin transfer in an antiferromagnet
• Structurally driven metamagnetism in MnP and related Pnma compounds
• Anomalous Hall effect in non-collinear antiferromagnetic antiperovskite Mn${}_3$Ni${}_{1-x}$Cu${}_x$N

Cited by in corpus (1)

• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN