Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic MnNiCuN films
arXiv:2003.03031 · doi:10.1063/1.5142250
Abstract
We report the growth of noncollinear antiferromagnetic (AFM) MnNiCuN films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger than that of (001) films. The present results provide not only a better understanding of the AHE in MnN systems but also further opportunities to study the unique phenomena related to noncollinear AFM.
arXiv commentThe following article has been accepted by Journal of Applied Physics
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Cited by in corpus (5)
- Spin-Polarized Antiferromagnetic Spintronics
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- Noncollinear Antiferromagnetic Spintronics
- Higher-order Hall response arises from octupole order and scalar spin chirality in a noncollinear antiferromagnet
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