Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Abstract

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.

arXiv comment25 pages, 10 figure. Accepted in Acta Materialia

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Cited by in corpus (24)

• Electric-Field-Controlled Antiferromagnetic Spintronic Devices
• Piezomagnetic switching of anomalous Hall effect in an antiferromagnet at room temperature
• Anisotropic magnetoresistance: materials, models and applications
• Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current
• Noncollinear Spintronics and Electric-Field Control: A Review
• Spin-Polarized Antiferromagnetic Spintronics
• Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal
• Experimental Progress on the Emergent Infinite-Layer Ni-Based Superconductors
• Large intrinsic anomalous Hall effect in both Nb${}_2$FeB${}_2$ and Ta${}_2$FeB${}_2$ with collinear antiferromagnetism
• Absence of Superconductivity in Nd${}_{0.8}$Sr${}_{0.2}$NiO${}_x$ Thin Films without Chemical Reduction
• Effects of filling, strain, and electric field on the Néel vector in antiferromagnetic CrSb
• Negligible oxygen vacancies, low critical current density, electric-field modulation, in-plane anisotropic and high-field transport of a superconducting Nd0.8Sr0.2NiO2/SrTiO3 heterostructure
• Large topological Hall effect in an easy-cone ferromagnet (Cr0.9B0.1)Te
• A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
• Epitaxial Integration of a Perpendicularly Magnetized Ferrimagnetic Metal on a Ferroelectric oxide for Electric-Field Control
• Noncollinear Antiferromagnetic Spintronics
• Strain tuning the magnetic and transport properties of Mn${}_3$Ge
• Epitaxial growth and orientation-dependent anomalous Hall effect of noncollinear antiferromagnetic Mn${}_3$Ni${}_{0.35}$Cu${}_{0.65}$N films
• Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect
• Tuning the Hall response of a noncollinear antiferromagnet via spin-transfer torques and oscillating magnetic fields
• Electric-Field-Controlled Altermagnetic Transition for Neuromorphic Computing
• Pressure-Induced Metal-Insulator and Paramagnet-Altermagnet Transitions in Rutile OsO2 Single Crystals
• Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions
• Uniaxial stress tuning of the anomalous Hall effect in Mn3Ge