635 citations · 1.3k across the 9 of their papers we have counts for
9 papers
Electric-Field-Controlled Antiferromagnetic Spintronic Devices
Han Yan, Zexin Feng, Peixin Qin +8
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic…
Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal
Huixin Guo, Zexin Feng, Han Yan +12
One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antif…
A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
Zexin Feng, Peixin Qin, Yali Yang +15
The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic fun…
Observation of the Anomalous Hall Effect in a Collinear Antiferromagnet
Zexin Feng, Xiaorong Zhou, Libor Šmejkal +16
Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The…
Absence of Superconductivity in NdSrNiO Thin Films without Chemical Reduction
Xiao-Rong Zhou, Ze-Xin Feng, Pei-Xin Qin +9
The recently reported superconductivity 9-15 K in Nd0.8Sr0.2NiO2/SrTiO3 heterostructures that were fabricated by a soft-chemical topotactic reduction approach based on precursor Nd…
Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control
Xiaoning Wang, Zexin Feng, Peixin Qin +11
Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvatu…
Antiferromagnetic Piezospintronics
Zhiqi Liu, Zexin Feng, Han Yan +6
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (…
A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields
Han Yan, Zexin Feng, Shunli Shang +17
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been…
Negative and nonlinear magnetoresistance effect in silicon strip
Fangcong Wang, Haixia Li, Hui Guo +2
Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field int…