Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal
arXiv:2108.04439 · doi:10.1002/adma.202002300
Abstract
One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel junction devices based on effective manipulation of antiferromagnetic spins. In this work, we demonstrate the giant piezoelectric strain control of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal - D019 hexagonal Mn3Ga. Furthermore, we built tunnel junction devices with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.
arXiv comment16 pages, 5 figures
References in corpus (13)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Berry Phase Effects on Electronic Properties
- Antiferromagnetic spintronics
- Electrical switching of an antiferromagnet
- Anomalous Hall effect arising from noncollinear antiferromagnetism
- Room-temperature antiferromagnetic memory resistor
- A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields
- Electric-Field-Controlled Antiferromagnetic Spintronic Devices
- Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy
- Antiferromagnetic Piezospintronics
- Electric-Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics
- Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control
- Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction
Cited by in corpus (16)
- Piezomagnetic switching of anomalous Hall effect in an antiferromagnet at room temperature
- Spin-Polarized Antiferromagnetic Spintronics
- Antiferromagnetism in Ni-Based Superconductors
- Experimental Progress on the Emergent Infinite-Layer Ni-Based Superconductors
- Large Anomalous Hall Effect at Room Temperature in a Fermi-Level-Tuned Kagome Antiferromagnet
- Negligible oxygen vacancies, low critical current density, electric-field modulation, in-plane anisotropic and high-field transport of a superconducting Nd0.8Sr0.2NiO2/SrTiO3 heterostructure
- A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
- Epitaxial Integration of a Perpendicularly Magnetized Ferrimagnetic Metal on a Ferroelectric oxide for Electric-Field Control
- Noncollinear Antiferromagnetic Spintronics
- Strain tuning the magnetic and transport properties of MnGe
- Room temperature weak collinear ferrimagnet with symmetry driven, large intrinsic magneto-optic signatures
- Tuning the Hall response of a noncollinear antiferromagnet via spin-transfer torques and oscillating magnetic fields
- Electric-Field-Controlled Altermagnetic Transition for Neuromorphic Computing
- Pressure-Induced Metal-Insulator and Paramagnet-Altermagnet Transitions in Rutile OsO2 Single Crystals
- Uniaxial stress tuning of the anomalous Hall effect in Mn3Ge
- Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions