activity
20192021
most citedA Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

204 citations · 448 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.str-el202118 cited

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

Zexin Feng, Peixin Qin, Yali Yang +15

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic fun…

cond-mat.mes-hall202069 cited

Noncollinear Spintronics and Electric-Field Control: A Review

Peixin Qin, Han Yan, Xiaoning Wang +8

Our world is composed of various materials with different structures, where spin structures have been playing a pivotal role in spintronic devices of the contemporary information t…

cond-mat.supr-con2019

Absence of Superconductivity in NdSrNiO Thin Films without Chemical Reduction

Xiao-Rong Zhou, Ze-Xin Feng, Pei-Xin Qin +9

The recently reported superconductivity 9-15 K in Nd0.8Sr0.2NiO2/SrTiO3 heterostructures that were fabricated by a soft-chemical topotactic reduction approach based on precursor Nd…

cond-mat.mtrl-sci201959 cited

Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control

Xiaoning Wang, Zexin Feng, Peixin Qin +11

Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvatu…

cond-mat.mes-hall201998 cited

Antiferromagnetic Piezospintronics

Zhiqi Liu, Zexin Feng, Han Yan +6

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (…

cond-mat.mtrl-sci2019204 cited

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

Han Yan, Zexin Feng, Shunli Shang +17

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been…