Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions

Abstract

We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness. The results of spin-dependent ballistic transport calculations reveal options to specifically manipulate the tunnel magnetoresistance ratio. The resistance area products and the tunnel magnetoresistance ratios show a monotonous trend with distinct oscillations as a function of the Cr thickness. These modulations are directly addressed and interpreted by means of magnetic structures in the Cr films and by complex band structure effects. The characteristics for embedded Co interlayers are considerably influenced by interface resonances which are analyzed by the local electronic structure.

References in corpus (5)

• Spintronics: Fundamentals and applications
• Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
• First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers
• Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
• Influence of Roughness and Disorder on Tunneling Magnetoresistance

Cited by in corpus (4)

• Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
• First-principles study of Co concentration and interfacial resonance states in Fe${}_{1-x}$Co${}_x$ magnetic tunnel junctions
• Correlating transmission and local electronic structure in planar junctions: A tool for analyzing spin-dependent transport calculations
• Approaches to tunnel magnetoresistance effect with antiferromagnets