Piezospintronic effect in antiperovskite Mn${}_3$GaN

Abstract

Based on first-principles calculations, we investigated the topological transport properties of Mn${}_3$GaN with coplanar noncollinear magnetic structures. The intrinsic anomalous Hall conductivity (IAHC) displays a significant dependence with respect to the in-plane magnetization direction between the ${\Gamma }_{5g}$ and ${\Gamma }_{4g}$ magnetic configurations, where large anomalous Nernst effect (ANE) can be induced by tailoring the magnetization direction. Moreover, we observed strong piezospintronic effect in Mn${}_3$GaN, where large IAHC can be induced by moderate epitaxial strain. Symmetry analysis reveals that for both cases, the nonzero IAHC is originated from the spin-orbit coupling instead of the noncollinear magnetic configurations

arXiv comment5 pages, 2 figures

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Cited by in corpus (8)

• Piezomagnetic switching of anomalous Hall effect in an antiferromagnet at room temperature
• Multifunctional Antiperovskites driven by Strong Magnetostructural Coupling
• Observation of an Anomalous Hall Effect in Single-crystal Mn3Pt
• Identifying the octupole Antiferromagnetic domain orientation in Mn${}_3$NiN by scanning Anomalous Nernst Effect microscopy
• Spin-Orbit Torque Switching of Noncollinear Antiferromagnetic Antiperovskite Manganese Nitride Mn${}_3$GaN
• Phase transitions associated with magnetic-field induced topological orbital momenta in a non-collinear antiferromagnet
• Anisotropic Piezomagnetism in Noncollinear Antiferromagnets
• Optimization of reactively sputtered Mn3GaN films based on resistivity measurements