High Curie Temperature Ferromagnetic Semiconductor: Bimetal Transition Iodide VCrI
arXiv:2012.04270
Abstract
Bimetal transition iodides in two-dimensional scale provide an interesting idea to combine a set of single-transition-metal ferromagnetic semiconductors together. Motivated by structural engineering on bilayer CrI to tune its magnetism and works that realize ideal properties by stacking van der Waals transitional metal dichalcogenides in a certain order. Here we stack monolayer VI onto monolayer CrI with a middle-layer I atoms discarded to construct monolayer VCrI. Based on this crystal model, the stable and metastable phases are determined among 7 possible phases by first-principles calculations. It is illustrated that both the two phases have Curie temperature 6 (4) times higher than monolayer CrI and VI. The reason can be partly attributed to their large magnetic anisotropy energy (the maximum value reaches 412.9 eV/atom). More importantly, the Curie temperature shows an electric field and strain dependent character and can even surpass room temperature under a moderate strain range. At last, we believe that the bimetal transition iodide VCrI monolayer would support potential opportunities for spintronic devices.
arXiv comment7 pages and 6 figures
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