Unusual kinetic properties of usual Heusler alloys
arXiv:2208.14868 · doi:10.1007/s10948-022-06342-1
Abstract
The review considers various groups of Heusler compounds, which can have the properties of a semiconductor, a half-metallic ferromagnet, a spin gapless semiconductor, a topological semimetal, and a noncollinear antiferromagnet. In these Heusler compounds, "conventional" from the point of view of the crystal structure, unusual kinetic and magnetic properties can be observed, which are caused by the features of their electronic structure (e.g., presence of an energy gap for one spin projection) and magnetic state (e.g., strong ferromagnetism, compensated ferrimagnetism, etc.). Their magnetic and kinetic characteristics are very sensitive to external influences. Depending on the alloy composition and external parameters, transitions between the considered states can be realized. All this opens up further prospects for controlling the electronic and magnetic characteristics of such compounds and their practical application.
31 pages, pdf
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Cited by in corpus (4)
- Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds MnYAl and MnZ (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)
- Magnetic order and electronic transport properties in the MnAl compound: the role of the structural state
- CoMnZ (Z = Al, Si, Ga, Ge, Sn) Heusler alloys as candidate materials for spintronic and microelectronic applications: Electronic structure, transport, and magnetism
- Regularities and features in the behavior of electrical and magnetic properties of CoFeZ (Z = Al, Si, Ga, Ge, Sn, Sb) half-metallic ferromagnetic Heusler alloys