Electronic Structure, Local Moments and Transport in Fe_2VAl
arXiv:cond-mat/9801302 · doi:10.1103/PhysRevB.57.14352
Abstract
Local spin density approximation calculations are used to elucidate electronic and magnetic properties of Heusler structure Fe_2VAl. The compound is found to be a low carrier density semimetal. The Fermi surface has small hole pockets derived from a triply degenerate Fe derived state at Gamma compensated by an V derived electron pocket at the X point. The ideal compound is found to be stable against ferromagnetism. Fe impurities on V sites, however, behave as local moments. Because of the separation of the hole and electron pockets the RKKY interaction between such local moments should be rapidly oscillating on the scale of its decay, leading to the likelihood of spin-glass behavior for moderate concentrations of Fe on V sites. These features are discussed in relation to experimental observations of an unusual insulating state in this compound.
16 pages, RevTeX, 5 figures
Cited by in corpus (22)
- Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States
- Electronic fitness function for screening semiconductors as thermoelectric materials
- Density functional study of elastic and vibrational properties of the Heusler-type alloys FeVAl and FeVGa
- Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder
- Thermoelectricity in correlated narrow-gap semiconductors
- Ferromagnetically correlated clusters in semi-metallic Ru2NbAl Heusler alloy
- Experimental realization of a semiconducting full Heusler compound: Fe2TiSi
- Unconventional transport behavior in the Quaternary Heusler compounds CoFeTiSn and CoFeVGa
- Weak itinerant ferromagnetism in Heusler type Fe2VAl0.95
- Unusual kinetic properties of usual Heusler alloys
- Structure and magnetic order in Fe2+xV1-xAl
- Quantum-Many-Body Intermetallics: Phase Stability of FeAl and Small-Gap Formation in FeVAl
- Off-stoichiometric effect on magnetic and electron transport properties of FeVAl in respect to NiVAl; Comparative study
- Half-Metallic L2 Structures with (001) Planar Insertions
- Composition induced metal-insulator quantum phase transition in the Heusler type Fe2VAl
- On the structure and electronic properties of FeVWAl thin films
- Magnetic instabilities in doped Fe full-Heusler thermoelectric compounds
- Effects of Antisite Defects on Seebeck Coefficient in Fe_2VAl -- Analyses based on Bipolar Random Anderson Model
- Understanding the anomalous thermoelectric behaviour of Fe-V-W-Al based thin films
- Local magnetic structure in fully and partially ordered VAl Heusler alloys (=Cr, Mn, Fe, Co, Ni)
- Theory of Huge Thermoelectric Effect Based on Magnon Drag Mechanism: Application to Thin-Film Heusler Alloy
- Effect of partial substitution of iso-valent Mo at Cr-site on electronic structure and physical properties of Fe2CrAl