Dirac spin gapless semiconductors: Ideal platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects
arXiv:1607.06057 · doi:10.1093/nsr/nww069
Abstract
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall effects which consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall effect measurements, but with vanishing Hall voltage. These new Hall effects can be classified as (quantum) anomalous spin Hall effects. The physics for massless and dissipationless spintronics and the new spin Hall effects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic type spin-gapless semiconductors are demonstrated in ferromagnetic monolayers of simple oxides with either honeycomb or square lattices.
arXiv comment5 pages, 7 figues
References in corpus (15)
- Electric Field Effect in Atomically Thin Carbon Films
- Topological Order and the Quantum Spin Hall Effect
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Electronic Structure of Pyrochlore Iridates: From Topological Dirac Metal to Mott Insulator
- Topological Insulators with Inversion Symmetry
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- Weyl Semimetal in a Topological Insulator Multilayer
- Quantum Anomalous Hall Effect in HgMnTe Quantum Wells
- Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl
- Quantum Anomalous Hall Effect in 2D Organic Topological Insulators
- Search for spin gapless semiconductors: The case of inverse Heusler compounds
- A new spin gapless semiconductor: quaternary Heusler CoFeCrGa alloy
- Emergent topological and half semimetallic Dirac Fermions at oxide interfaces
- Dirac half-metal in a triangular ferrimagnet
- Theory of the Dirac Half Metal and Quantum Anomalous Hall Effect in Mn Intercalated Epitaxial Graphene
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- Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides
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- Quantum Spin Hall Effect in Magnetic Graphene
- Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals
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