Search for spin gapless semiconductors: The case of inverse Heusler compounds

Abstract

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.

Submitted to Applied Physics Letters

References in corpus (2)

• Electric Field Effect in Atomically Thin Carbon Films
• Half-metallic ferromagnets: From band structure to many-body effects

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