Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates
arXiv:1408.1547 · doi:10.1063/1.4884203
Abstract
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.
13 pages, 5 figs. Accepted by APL
References in corpus (5)
- A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds
- Magnetic and transport properties of Mn2CoAl oriented thin films
- Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi
- Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena
- Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates
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- A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds
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- Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism
- Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films
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- Exploring Disorder in the Spin Gapless Semiconductor MnCoAl
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- Disorder mediated fully compensated ferrimagnetic spin-gapless semiconducting behaviour in Cr3Al Heusler alloy