Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

Abstract

Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

arXiv commentSubmitted to Journal of Applied Physics on October 4, 2014

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• Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl
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• Search for spin gapless semiconductors: The case of inverse Heusler compounds
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Cited by in corpus (6)

• Antiferromagnetic phase of the gapless semiconductor V3Al
• A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds
• Anomalous Hall conductivity and electronic structures of Si-substituted Mn${}_2$CoAl epitaxial films
• Low-moment ferrimagnetic phase of the Heusler compound Cr2CoAl
• Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy
• Exploring Disorder in the Spin Gapless Semiconductor Mn${}_2$CoAl